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An inverted transistor strucure with a smaller collectors on top and a larger emitter on the bottom becomes possible, with speed advantages over the common.
Table of contents
- Silicon-Germanium Heterostructure Devices: Basics and Realisations
- Silicon Quantum Integrated Circuits
- High Speed Heterostructure Devices, Volume 41 - 1st Edition
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This translates into better low current and high frequency performance. Being a heterojunction technology with an adjustable band gap , the SiGe offers the opportunity for more flexible band gap tuning than silicon-only technology. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents. From Wikipedia, the free encyclopedia.
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Silicon-Germanium Heterostructure Devices: Basics and Realisations
Meyerson March Scientific American, March , Vol. Woelk; D.
Section IV examines the design and technology. The multiplier operated at clock frequency of performance of the circuits. Section V discusses relevant MHz with a power dissipation of 1. Kajii et al. Interlevel Dielectric, Via Etch and plug 6. Using 2-Level Resist Crossover I. Layer thicknesses are determined zyxwvut metal layers is also defined using the dielectric-assisted using Rheed oscillations, and doping calibrations are car- lift-off DAL tecJnique. The second metal layer, con- ried out using CV and Hall measurements. After MBE sisting of a A -thick Au-based layer, is defined using layer growth, a tungsten silicide gate metal is deposited a two-layer resist lift-off technique.
The process has an by sputter deposition.
Silicon Quantum Integrated Circuits
The gate metal is delineated by re- optional via plug layer between the first metal layer and active-ion etching with a nominal gate length of 1 pm. This option allows the first Heavily doped source and drain contact regions and sat- metal layer to be isolated from the substrate. This in- urated resistors ungated FET's are formed by ion im- creases the radiation hardness of the process and reduces plantation.
The implant layers are activated by rapid op- the capacitance between signal lines on the first metal tical anneal in an Eaton Nova system that has been level. This via plug laye! The devices are isolated by oxygen ion im- Another optional feature of the process is a Cr: Si thin- plantation followed by a lower temperature rapid-optical film resistor layer that is deposited by sputter deposition anneal to activate the isolation implant.
Ohmic contacts and delineated by ion milling. The individual devices are interconnected by a two-level Au-based metallization scheme, separated by an inter- Device Structures both levels. The first-level metal interconnect layer is de- fined using dielectric assisted lift-off DAL. The thick- Three device structures were used in fabricating the cir- ness of both th? Van der Pauw measurements on deple- electric separates the first metal layer from the second tion-mode MODFET's ive a sheet carrier concentration metal layer.
A via plug between the first metal and second B of 0.
AI mole fraction is 30 percent. AI mole fraction is 35 percent. A sheet carrier concentration of 1.
High Speed Heterostructure Devices, Volume 41 - 1st Edition
The second device structure, shown in analog-to-digital converter circuits [ A ricated using all three structures. The device results for sheet carrier concentration of 0. De- will now be examined. The three device structures are tails of device characteristics and properties have been re- compared in terms of their characteristics and their suit- ported elsewhere , . The third device structure, ability for each application discussed below. The GaAs doping den- sity was determined to be about X 10l8 cm-3 from B. Details of device character- Table I shows a comparison of typical device charac- istics and properties of this structure have been reported teristics measured on the three different structures.
The elsewhere [ For all three device struc- circuit.
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These devices have nominal gate lengths of 1 pm tures, the thickness of the charge-control layer is adjusted and gate widths of 10 pm. A1 mole fraction is 30 zyxwvutsrqpon percent. TABLE 1 2. The standard devia- 0 tion of the threshold voltage of devices in a 12 x 14 FET vgs V array is less than 12 mV over a 0. Peak transconductance g, versus voltage swing V,, group of heterostructure FET wafers. The small-signal current gain cutoff frequency is given by saturation of gmpeak at high logic swings V,, - V, indi- cates that the devices are approaching the regime in which electron transfer into the Al, Ga As layer limits the de- vice performance [ , [ In order to maximizefT, C,, must be decreased while Given the dependence of peak transconductance on the g, must be increased.
There are many literature reports voltage swing and hence gate current , Ruden et al. As shown here, it can rent. This has the effect of increasing the turn-on voltage, also affect the maximum g,. The reduction in gate current and the conse- a good description of the physical mechanisms responsi- quent increase in turn-on voltage, voltage swing, and peak ble for gate current was given by Ruden et al.
In transconductance has been demonstrated by Daniels et al. If the voltage swing is defined as the difference between the turn-on voltage and the threshold voltage, we observe from our data that the peak transcon- ductance depends on the voltage swing. Details of voltage swing at low-voltage swings; however, at high- this relationship between gate voltage and transconduc- voltage swings, the peak transconductance saturates.
The tance are the subject of an upcoming paper . We think that this may be zyxwvutsr related to the reduction in mobility due to doping in the channel. We attribute this to the lower transconductance factor 0 of the super- Fig. The This is qualitatively consistent with the equation above. High noise effective Schottky barrier because the Al, Ga As layer is margins are desired for the purposes of functionality and not doped and 2 to increased band discontinuity due to yield; however, high switching currents are also desired the higher A1 mole fraction.
Another advantage of the su- for speed. The switching or load current Z, determines the perlattice MODFET over the conventional FET is the speed because the gate delay is inversely proportional to lower temperature sensitivity of threshold voltage and the the switching current [ These are a 8 x 8 mul- tegrated circuit designed to clock at MHz.
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We shall first examine accumulated to 24 bits. The block diagram of the circuit the digital circuits, i. It uses a Wallace tree with a feedback and the 16 X 16 complex multiplier. The discussion be- path to reduce the partial products. The first stage of the gins with the basic building block, the DCFL NOR gate, chip latches in data and forms all partial products simul- before proceeding to describing the circuit architecture, taneously.
These products are then partially assimilated design, and test results. Then the discussion of the mixed using full adders and then latched. Finally, the tial amplifier and comparator, before proceeding to de- last stage takes the partially assimilated sums and carries scribing the circuit architecture, design, and test results. Thus, in three pipelined stages, the partial products A. An The basic building block of the adders and registers is additional 8 bits of growth is allowed in the accumulator, the DCFL NOR gate with a special load structure.
The cur- leading to a bit result. The basic inverter structure and were obtained for evaluation.